极低阈值和中等蓝移的杂质诱导无序应变Ingaas-gaas量子阱激光器

[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI:10.1109/DRC.1991.664669

W. Zou, J. Merz, L. Coldren, R. Fu, C. Hong

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引用次数: 0

摘要

只提供摘要形式。本文报道了应变InGaAs-QW杂质诱导无序(IID)激光器，该激光器具有自对准结构，具有极低的阈值电流和适中的激光波长蓝移。采用MOCVD生长应变InGaAs-QW材料。介绍了制备工艺。作者认为，Si扩散IID是一种非常有吸引力的制备应变InGaAs-QW激光器的方法。>

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Strained Ingaas-gaas Quantum Well Lasers By Impurity-induced Disordering With Very Low Threshold and Moderate Blue-shift

Summary form only given. The authors report on strained InGaAs-QW impurity-induced disordering (IID) lasers having self-aligned structure with very low threshold current and moderate blue-shift of the lasing wavelength. The strained InGaAs-QW material employed was grown by MOCVD. The fabrication process is described. The authors believe that IID by Si diffusion is a very attractive approach for the fabrication of strained InGaAs-QW lasers. >

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[1991] 49th Annual Device Research Conference Digest

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