{"title":"高通量金属离子注入形成的CoSi/ sub2 //Si肖特基结","authors":"Z. Hao, Wang Yan","doi":"10.1109/IWJT.2004.1306783","DOIUrl":null,"url":null,"abstract":"In this paper we present the research of forming CoSi/sub 2//Si Schottky barrier through a novel technology - the metal ion implantation. The electronic characteristics including I-V and C-V characteristics were investigated for the first time. In implantation parameters: dose 3/spl times/10/sup 17/ion/cm/sup 2/ Co; energy, 20kV. After implantation the wafers were annealed for 1 minute at 850/spl deg/C by rapid thermal annealing (RTA). I-V results show that barrier height is 0.64eV and ideality factor is 1.11. The barrier height extracted from C-V results is 0.72eV. Improvements for this new technique are needed.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CoSi/sub 2//Si Schottky junction formed by high flux metal ion implantation\",\"authors\":\"Z. Hao, Wang Yan\",\"doi\":\"10.1109/IWJT.2004.1306783\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present the research of forming CoSi/sub 2//Si Schottky barrier through a novel technology - the metal ion implantation. The electronic characteristics including I-V and C-V characteristics were investigated for the first time. In implantation parameters: dose 3/spl times/10/sup 17/ion/cm/sup 2/ Co; energy, 20kV. After implantation the wafers were annealed for 1 minute at 850/spl deg/C by rapid thermal annealing (RTA). I-V results show that barrier height is 0.64eV and ideality factor is 1.11. The barrier height extracted from C-V results is 0.72eV. Improvements for this new technique are needed.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306783\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306783","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CoSi/sub 2//Si Schottky junction formed by high flux metal ion implantation
In this paper we present the research of forming CoSi/sub 2//Si Schottky barrier through a novel technology - the metal ion implantation. The electronic characteristics including I-V and C-V characteristics were investigated for the first time. In implantation parameters: dose 3/spl times/10/sup 17/ion/cm/sup 2/ Co; energy, 20kV. After implantation the wafers were annealed for 1 minute at 850/spl deg/C by rapid thermal annealing (RTA). I-V results show that barrier height is 0.64eV and ideality factor is 1.11. The barrier height extracted from C-V results is 0.72eV. Improvements for this new technique are needed.
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