MFM电容器用钛酸铅自旋镀膜的制备

Z. Nurbaya, N. Azhar, L. N. Ismail, M. Wahid, S. Alrokayan, H. Khan, M. Rusop
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引用次数: 1

摘要

自第一批铁电材料问世以来,人们就知道高介电材料用于薄膜电容器。存储大能量密度的能力将是追求纳米级薄膜电容器应用的理想标准。目前,电容器件已不再局限于单一功能,而是成为一种复杂的器件,其中涉及到铁电材料。本研究将采用溶胶-凝胶自旋镀膜的方法制备钛酸铅基陶瓷薄膜,并采用典型的多层镀膜方法对其铁电性能、介电性能和电容特性进行研究。测量是基于100 kHz和1 MHz频率的应用,有一个重要的发现,介电材料的性质。其他,如表面轮廓仪(KLA Tencor)用于薄膜厚度测量,报告厚度在200nm以下。采用氧化铟锡镀膜玻璃作为衬底制备PbTiO3金属-铁电-金属器件,采用热蒸发器法沉积Al金属作为顶电极。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication of Spin Coating Deposited Nanofilms Lead Titanate for MFM Capacitor
The use of high dielectric material for thin films capacitor has been known since the first ferroelectric materials were introduced. The capability to store large energy density would be the ideal criteria to pursue nanoscaled films capacitor applications. Nowadays, capacitor device becomes complex device rather than just focus at single function where ferroelectric material get involves. In this study, lead based titanate thin films ceramic will be fabricated by sol-gel spin coating method with typical multicoating layers to investigate the ferroelectric, dielectric properties, and capacitance characteristic. The measurements were based on 100 kHz and 1 MHz frequencies application which there's lies the significant finding of the dielectric materials property. Other, like surface profiler (KLA Tencor) is used as films thickness measurement that reports under 200nm thickness. PbTiO3 metal-ferroelectric-metal device is going to be prepared by involves the indium tin oxide coated glass as substrate, whereas Al metal will be deposited as top electrode through thermal evaporator method.
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