{"title":"用于低噪声应用的AH-JFET放大器","authors":"W. Buttler, B. Hosticka","doi":"10.1109/ESSCIRC.1989.5468140","DOIUrl":null,"url":null,"abstract":"In this contribution we present amplifiersfor low noise applications. They have been designed using only N- and P-channel CMOS-compatible junction field effect transistors (JFET) for biasing, amplification, and switching. Using these components a very low noise amplifier system was integrated which consists of a charge sensitive preamplifier and an SC noise filter. Since all active components in this circuit are made of CMOS-compatible JFET's, the amplifier system is also radiation hardened.","PeriodicalId":187183,"journal":{"name":"ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"AH-JFET Amplifiers For Low Noise Applications\",\"authors\":\"W. Buttler, B. Hosticka\",\"doi\":\"10.1109/ESSCIRC.1989.5468140\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this contribution we present amplifiersfor low noise applications. They have been designed using only N- and P-channel CMOS-compatible junction field effect transistors (JFET) for biasing, amplification, and switching. Using these components a very low noise amplifier system was integrated which consists of a charge sensitive preamplifier and an SC noise filter. Since all active components in this circuit are made of CMOS-compatible JFET's, the amplifier system is also radiation hardened.\",\"PeriodicalId\":187183,\"journal\":{\"name\":\"ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.1989.5468140\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1989.5468140","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this contribution we present amplifiersfor low noise applications. They have been designed using only N- and P-channel CMOS-compatible junction field effect transistors (JFET) for biasing, amplification, and switching. Using these components a very low noise amplifier system was integrated which consists of a charge sensitive preamplifier and an SC noise filter. Since all active components in this circuit are made of CMOS-compatible JFET's, the amplifier system is also radiation hardened.
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