SOI mosfet的自热效应

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785951

S. Zimin, Liu Litian, L. Zhijian

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引用次数: 14

摘要

SOI mosfet的自热效应影响载流子迁移率、SOI mosfet的阈值电压和沟道内硅的带隙。本文分析了SOI mosfet的产热和散热机理，在此基础上建立了简单的自热效应模型。该模型只引入了一个与自热效应有关的因素，该因素的取值很容易根据器件的结构参数确定。并通过实验对模型进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Self-heating effect in SOI MOSFETs

Self-heating effect in SOI MOSFETs affects the carrier mobility, SOI MOSFETs threshold voltage and the band gap of silicon in channel. The mechanism of heat generation and heat dissipation in SOI MOSFETs is analyzed in this paper on the basis of which a simple self-heating effect model is established. The model introduces only one factor related with self-heating effect whose value can be easily determined according to the device structure parameters. The model is also verified experimentally.

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来源期刊

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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