磷在锗中的δ掺杂

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874623

Giordano Scappucci

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引用次数: 2

摘要

我们已经证明，在超高真空中磷δ掺杂锗是一种很有前途的技术，可以在高密度(>1020 cm-3)的锗薄膜中调谐掺杂。最终，光子或电子应用所需的高掺杂密度可以通过适当选择层的总数，调整它们在δ层堆栈中的分离，以及设计每层中P的掺入量来实现。

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Phosphorus delta-doping in germanium

We have demonstrated that phosphorus delta-doping of germanium in ultra-high vacuum is a promising technique to tune doping at high densities (>1020 cm-3) in thin Ge films. Eventually, high doping densities on demand for photonic or electronic applications may be delivered by suitably choosing the total number of layers, tuning their separation in the δ-layer stack, and engineering the amount of P incorporated in each layer.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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