28FDSOI双通道USB超快速无帽LDO

S. Singh, Gautam Dey Kanungo
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引用次数: 5

摘要

提出了一种用于28nm FDSOI的快速负载瞬态的全片上LDO,最高可达15mA/nsec。提出的LDO利用芯片上电容密度和MOS电流驱动的技术提升来实现传统的补偿技术,而不使用片外电容。主导输出极使LDO实现其优越的负载瞬态性能。建议的LDO从1.6V输入电源产生1.0V输出,最大输出电流容量为15mA。在最大负载条件下,模拟10kHz时的最坏情况PSR为23db,电流效率为93%。三个这样的ldo组合在一起,为双通道USB核心及其锁相环提供专用的1.0V电源。面积包括参考发生器,三个LDO和所有片上电容为0.2mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra-fast Cap-less LDO for Dual Lane USB in 28FDSOI
A fully on-chip LDO for very fast load transient up to 15mA/nsec in 28nm FDSOI is presented. Proposed LDO capitalizes on technological boost given to on-chip capacitance density and MOS current drives to implement conventional compensation technique without using off-chip capacitor. Dominant output pole enables the LDO to achieve its superior load transient performance. Proposed LDO generates 1.0V output from a 1.6V input supply and has maximum output current capacity of 15mA. Simulated worst case PSR at 10kHz is-23dB and current efficiency is 93% at maximum load condition. Three such LDOs are combined to provide dedicated 1.0V supplies to dual lane USB cores and their PLL. Area including reference generator, three LDO and all on-chip capacitances is 0.2mm2.
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