SOI mosfet热载流子退化的数值模拟

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI:10.1109/IWJT.2004.1306855

Qing Lin, M. Zhu, Yan-jun Wu, Xinyun Xie, Zhengxuan Zhang, Cheng-lu Lin

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引用次数: 1

摘要

我们提出了一种基于模拟的方法来表征SOI mosfet中的热载子降解，包括热载子注入、载流子输运和载流子在栅极氧化物中的捕获模型。这种方法清楚地说明了SOI mosfet中热载流子退化的物理机制。为了抑制热载子效应，我们还提出了SOI LDDMOSFET结构，并对仿真结果进行了对比。

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Numerical simulation of hot-carrier degradation in SOI MOSFETs

We present a simulation-based approach for characterizing hot-carrier degradation in SOI MOSFETs, which includes models for hot-carrier injection, carrier transport, and carrier trapping in the gate oxide. This approach clearly illustrates the physical mechanisms responsible for hot-carrier degradation in SOI MOSFETs. To suppress the hot-carrier effect, we have also proposed the SOI LDDMOSFET structure and the simulation results have been compared with each other.

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The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

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