S. Tsao, J. Frayer, C.S. Pang, Y. Ma, K. Kwon, Y. Choi, D. Kim, J. Kim, J. Park
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A 5V-only 16M flash memory using a contactless array of source-side injection cells
The source side injection technology coupled with a modified virtual ground contactless array architecture is effective in addressing high density FLASH requirements. We describe a single supply 16 Mbit chip developed in a 0.7 /spl mu/m triple-poly double metal process using a 3.36 /spl mu/m/sup 2/ cell. The design challenge is to implement all the necessary array interface circuitry while maintaining a high array-to-chip area efficiency. This implementation requires unique decoding circuitry on the bitlines and cell control gates.
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