{"title":"采用独特离子注入工艺的高性能单片功率放大器","authors":"S. Wang, K.G. Wang, C.D. Chang","doi":"10.1109/MCS.1986.1114469","DOIUrl":null,"url":null,"abstract":"State-of-the-art X-band power FETs and monolithic amplifiers have been fabricated by a high yield planar process using a unique double-peaked implant profile. A 1-mm FET has achieved 40 percent power added efficiency with 720 mW output power and 6.3 dB gain at 10 GHz. A two-stage monolithic amplifier has delivered 2.2 W output power at 9.5 GHz for a record 0.6 W/mm power density. The monolithic amplifier chips have also achieved 20 percent dc-yield and 5 percent uniformity in /sup I/DSS and /sup V/PO.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Performance Monolithic Power Amplifier Using a Unique Ion Implantation Process\",\"authors\":\"S. Wang, K.G. Wang, C.D. Chang\",\"doi\":\"10.1109/MCS.1986.1114469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"State-of-the-art X-band power FETs and monolithic amplifiers have been fabricated by a high yield planar process using a unique double-peaked implant profile. A 1-mm FET has achieved 40 percent power added efficiency with 720 mW output power and 6.3 dB gain at 10 GHz. A two-stage monolithic amplifier has delivered 2.2 W output power at 9.5 GHz for a record 0.6 W/mm power density. The monolithic amplifier chips have also achieved 20 percent dc-yield and 5 percent uniformity in /sup I/DSS and /sup V/PO.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1986.1114469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1986.1114469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Performance Monolithic Power Amplifier Using a Unique Ion Implantation Process
State-of-the-art X-band power FETs and monolithic amplifiers have been fabricated by a high yield planar process using a unique double-peaked implant profile. A 1-mm FET has achieved 40 percent power added efficiency with 720 mW output power and 6.3 dB gain at 10 GHz. A two-stage monolithic amplifier has delivered 2.2 W output power at 9.5 GHz for a record 0.6 W/mm power density. The monolithic amplifier chips have also achieved 20 percent dc-yield and 5 percent uniformity in /sup I/DSS and /sup V/PO.
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