创新的保险丝(I-Fuse)阵列，采用22nm FD-SOI，程序电压/电流为0.9V/1.4mA，电池面积为0.444 um2

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8308735

Shine C. Chung, Wen-Kuan Fang, Jay Lin, Wen-Hua Yu, J. Hsiao

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引用次数: 1

摘要

I-fuse是一种革命性的OTP，其编程低于热失控设定，高于电迁移(EM)阈值。在22nm FD-SOI上，1R1T i -保险丝具有0.744 mm2单元和0.0312mm2 32Kb阵列，程序电压范围为0.9 V至1.4 V。整个阵列不需要高压电路或充电泵。数据0和1的单元电流分布非常紧密，并且之间有很大的间隔，可以很容易地检测到。第一个切割设计已经在150℃下测试了1000小时，电池电流变化非常小。

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32Kb Innovative fuse (I-Fuse) array in 22nm FD-SOI with 0.9V/1.4mA program voltage/current and 0.744um2 cell

I-fuse is a revolutionary OTP programmed below an on-set of thermal runaway and above electromigration (EM) threshold. On 22nm FD-SOI, the 1R1T I-fuse has a 0.744um2 cell and 0.0312mm2 32Kb array with program voltage ranging from 0.9 V to 1.4 V. The whole array does not require high voltage circuits or charge pumps. The cell current distributions for data 0 and 1 are very tight and have large separation in between that can be sensed easily. The first cut design has been qualified at 150oC for 1,000 hours with very small cell current variations.

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2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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