开发和建设用于EUV光刻应用的独立检测、计量和校准工具的挑战

Lithography Asia Pub Date : 2009-12-03 DOI:10.1117/12.837086
J. Underwood, David C. Houser, Aaron T. Latzke, R. Perera
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引用次数: 2

摘要

极紫外(EUV)光刻技术目前被认为是硅器件制造中达到22纳米节点的最有前途的方法。正在进行的EUVL研究工作的主要挑战之一是开发必要的波长计量工具。EUV Technology是世界领先的EUV计量工具制造商,生产用于利用和分析短波电磁辐射-软x射线和极紫外线(EUV)的定制仪器。我们公司率先开发了几种用于EUV光刻应用的独立检测,计量和校准工具,这些工具可以在晶圆厂地板上的洁净室环境中操作。本文将概述用于EUV光刻的必要计量工具,以及开发这些工具所面临的挑战,以支持在22nm节点上成功实施EUV光刻。此外,我们还将详细描述我们已经交付的EUV计量工具,它们的长期性能和这些工具的稳定性,以及我们开发反射计以实现HVM要求的计划。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Challenges in development and construction of stand-alone inspection, metrology, and calibration tools for EUV lithographic applications
Extreme Ultraviolet (EUV) Lithography is currently viewed as the most promising approach for reaching the 22 nm node in the manufacture of silicon devices. One of the principal challenges in the ongoing EUVL research effort is the development of necessary at-wavelength metrology tools. EUV Technology worlds leading manufacturer of EUV metrology tools manufactures custom instrumentation for the utilization and analysis of short wavelength electromagnetic radiation - soft x-rays and extreme ultraviolet (EUV). Our company has pioneered the development of several stand-alone inspection, metrology, and calibration tools for EUV lithographic applications that can be operated in a clean room environment on the floor of a fab. An overview of necessary metrology tools for EUV Lithography will be presented, along with the challenges in developing these tools in order to support the successful implementation of EUV Lithography for the 22nm node. In addition, a detailed description of the EUV metrology tools we have delivered, their long term performance and stability of these tools along with our plans for developing a Reflectometer to achieve the HVM requirements will be discussed.
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