高效impat二极管的研究进展

1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1977.1155719

J. Gewartowski

{"title":"高效impat二极管的研究进展","authors":"J. Gewartowski","doi":"10.1109/ISSCC.1977.1155719","DOIUrl":null,"url":null,"abstract":"High-efficiency diodes of early design were relatively noisy, wi th noise measures in excess of 50 dB. Recent designs have achieved noise measures about 10 dB lower. Unlike the uniformly-doped IMPATT diodes, the noise measure a t low R F levels does not improve very much, and hence, the high-efficiency diode may not be suitable for an application where the noise performance is critical. This has resulted in amplifier designs where flat-profile diodes are used for the first stages and high-efficiency diodes are used for the power stages.","PeriodicalId":416313,"journal":{"name":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Progress with high efficiency IMPATT diodes\",\"authors\":\"J. Gewartowski\",\"doi\":\"10.1109/ISSCC.1977.1155719\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-efficiency diodes of early design were relatively noisy, wi th noise measures in excess of 50 dB. Recent designs have achieved noise measures about 10 dB lower. Unlike the uniformly-doped IMPATT diodes, the noise measure a t low R F levels does not improve very much, and hence, the high-efficiency diode may not be suitable for an application where the noise performance is critical. This has resulted in amplifier designs where flat-profile diodes are used for the first stages and high-efficiency diodes are used for the power stages.\",\"PeriodicalId\":416313,\"journal\":{\"name\":\"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1977.1155719\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1977.1155719","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

早期设计的高效二极管噪声相对较大，噪声测量值超过50 dB。最近的设计已使噪音降低约10分贝。与均匀掺杂的IMPATT二极管不同，低R - F水平下的噪声测量并没有得到很大改善，因此，高效率二极管可能不适合噪声性能至关重要的应用。这导致了在放大器设计中，平面二极管用于一级，高效率二极管用于功率级。

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Progress with high efficiency IMPATT diodes

High-efficiency diodes of early design were relatively noisy, wi th noise measures in excess of 50 dB. Recent designs have achieved noise measures about 10 dB lower. Unlike the uniformly-doped IMPATT diodes, the noise measure a t low R F levels does not improve very much, and hence, the high-efficiency diode may not be suitable for an application where the noise performance is critical. This has resulted in amplifier designs where flat-profile diodes are used for the first stages and high-efficiency diodes are used for the power stages.

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1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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