FeRAM宏低压保护电路

Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434) Pub Date : 2000-08-28 DOI:10.1109/APASIC.2000.896982

H. Kang, H. Kye, D. Kim, Je-Hoon Park, Soo-Nam Jang, Ji-Hwan Ryu, Jin-Yong Chung

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引用次数: 0

摘要

采用溶胶-凝胶SBT的256kb ITIC FeRAM无需字线升压方案，可在2.7 V至5.5 V的宽电压范围内工作，并由新颖的开机/关机保护电路组成，在意外开机/关机时采用同步操作方法对/CE脉冲进行操作。

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Low voltage protection circuit for FeRAM macro

A 256 Kb ITIC FeRAM with sol-gel SBT provides wide operation of supply voltages ranging from 2.7 V to 5.5 V without a word-line boost scheme, and is composed of a novel power-on/off protection circuit with synchronized operation method to /CE pulse during the unintentional power-on/off.

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Proceedings of Second IEEE Asia Pacific Conference on ASICs. AP-ASIC 2000 (Cat. No.00EX434)

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