用于每通道2.5 Gbit/s并行光互连的倒装pin-光电二极管阵列

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492027

U. Spalthoff, J. Scherb, W. Korber, A. Ambrosy, J. Hehmann, D. Ferling, W. Rehm

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引用次数: 2

摘要

在半绝缘InP衬底上实现了高速InP- ingaas -InP引脚光电二极管阵列。由于二极管在-10伏时的低电容为530 fF和低串联电阻，基本上可以实现高达4 GHz的平坦频率响应。在Au/Au热压缩倒装芯片结合到集成v型槽、互连线和Au凸起的硅主板上后，它们被被动耦合到单模光纤带上。总体性能表明，该阵列同时满足高灵敏度2.5 Gbit/s接收机和低成本无源对准光纤耦合的先进要求。

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Flip-chip-mounted pin-photodiode array for 2.5 Gbit/s-per-channel parallel optical interconnections

High speed InP-InGaAs-InP pin photodiode arrays on semi-insulating InP substrate have been realized. Essentially flat frequency response up to 4 GHz has been achieved due to low diode capacitance of 530 fF at -10 volts and low series resistance. After Au/Au thermocompression flip-chip bonding onto silicon motherboards with integrated V-grooves, interconnection lines and Au bumps they have been passively coupled to single mode fibre ribbons. The overall performance demonstrates that the array simultaneously meets advanced requirements for high sensitivity 2.5 Gbit/s receivers as well as for low-cost fibre coupling with passive alignment.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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