两级整体式薄膜冷却器

ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069) Pub Date : 2000-05-23 DOI:10.1109/ITHERM.2000.866169

C. LaBounty, A. Shakouri, P. Abraham, J. Bowers

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引用次数: 2

摘要

垂直腔面发射激光器(VCSEL)等光电器件产生的热功率密度高达100 W/cm/sup /。提出了一种由两级单片集成薄膜热离子热电冷却器组成的新型器件结构，以适应这些冷却要求。通过优化每个阶段的几何形状，可以实现更好的散热，从而增加冷却功率密度。对两级三端结构进行了实验研究。在III-V型半导体材料系统中已经证明了100 W/cm/sup 2/的冷却功率密度，证明这些冷却器与光电器件的集成应该是可能的。

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Two stage monolithic thin film coolers

Optoelectronic devices such as vertical cavity surface emitting lasers (VCSEL's) generate large heat power densities on the order of 100's of W/cm/sup 2/. A novel device structure consisting of a two-stage monolithically integrated thin film thermionic and thermoelectric cooler is proposed to accommodate these cooling requirements. By optimizing the geometry of each stage, improved heat spreading can be achieved resulting in an increase of the cooling power density. The two-stage, three terminal structure is investigated experimentally. Cooling power densities of 100's W/cm/sup 2/ have been demonstrated in III-V semiconductor material systems proving that the integration of these coolers with optoelectronic devices should be possible.

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ITHERM 2000. The Seventh Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (Cat. No.00CH37069)

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