边缘定义的90nm tft具有可调的V/sub / T/ 3d兼容工艺

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563522

J. Nasrullah, J. Burr, G. Leonard Tyler, Y. Nishi

{"title":"边缘定义的90nm tft具有可调的V/sub / T/ 3d兼容工艺","authors":"J. Nasrullah, J. Burr, G. Leonard Tyler, Y. Nishi","doi":"10.1109/SOI.2005.1563522","DOIUrl":null,"url":null,"abstract":"This work focuses on the processing technology that achieves device V/sub T/ adjustability in second and higher layers of short-channel stacked devices. The device mobility and adjusted subthreshold behavior reported here are, however, comparable to those in other TFT work.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Edge-defined 90nm TFTs with adjustable V/sub T/ in a 3-D compatible process\",\"authors\":\"J. Nasrullah, J. Burr, G. Leonard Tyler, Y. Nishi\",\"doi\":\"10.1109/SOI.2005.1563522\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work focuses on the processing technology that achieves device V/sub T/ adjustability in second and higher layers of short-channel stacked devices. The device mobility and adjusted subthreshold behavior reported here are, however, comparable to those in other TFT work.\",\"PeriodicalId\":116606,\"journal\":{\"name\":\"2005 IEEE International SOI Conference Proceedings\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2005.1563522\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563522","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文主要研究在短通道堆叠器件的第二层及以上层实现器件V/sub / T/可调的加工技术。然而，这里报告的器件移动性和调整的阈下行为与其他TFT工作相当。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Edge-defined 90nm TFTs with adjustable V/sub T/ in a 3-D compatible process

This work focuses on the processing technology that achieves device V/sub T/ adjustability in second and higher layers of short-channel stacked devices. The device mobility and adjusted subthreshold behavior reported here are, however, comparable to those in other TFT work.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2005 IEEE International SOI Conference Proceedings

自引率

0.00%

发文量