射频LDMOS特性及其紧凑建模

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Pub Date : 2001-05-20 DOI:10.1109/MWSYM.2001.967053

Jaejune Jang, O. Tornblad, T. Arnborg, Qiang Chen, K. Banerjee, Zhiping Yu, R. Dutton

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引用次数: 35

摘要

本文采用器件仿真和分析建模的方法对大功率LDMOS进行了表征。分析了梯度沟道和准饱和效应等LDMOS特性对电容和非线性LDD电阻的特殊影响，并利用器件仿真技术对其进行了建模。结合BSIM3 MOSFET模型，在HSPICE中实现了基于附加集总元素的LDMOS紧凑模型。

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RF LDMOS characterization and its compact modeling

This paper presents characterization of power LDMOS using device simulation and analytical modeling. Features of the LDMOS such as graded channel and quasi-saturation effect which result in a peculiar behavior on capacitance and nonlinear LDD resistance are analyzed and modeled using device simulation. A compact model for LDMOS is implemented in HSPICE based on additional lumped elements, combined with the BSIM3 MOSFET model.

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2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)

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