垂直高迁移率包裹门控纳米线晶体管

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553100

T. Bryllert, L. Samuelson, L. Jensen, L. Wernersson

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引用次数: 45

摘要

我们展示了一种基于垂直站立的InAs纳米线矩阵的包裹门控场效应晶体管(Jensen等人，2004)。由跨电导得出的迁移率下限约为3000 cm2/Vs。窄的~100 nm通道具有优异的电流饱和和Vg = -0.15 V的阈值。亚阈值特性显示出接近理想的斜率为62mV/ 10年超过两个数量级

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Vertical high mobility wrap-gated inas nanowire transistor

We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm2/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of Vg = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude

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63rd Device Research Conference Digest, 2005. DRC '05.

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