先进技术节点中二进制、PSM和OMOG掩模的工艺性能评价

Weimei Xie, Yanpeng Chen, Shirui Yu, Yu Zhang
{"title":"先进技术节点中二进制、PSM和OMOG掩模的工艺性能评价","authors":"Weimei Xie, Yanpeng Chen, Shirui Yu, Yu Zhang","doi":"10.1109/IWAPS51164.2020.9286801","DOIUrl":null,"url":null,"abstract":"As the critical dimension of mask shrinks, revolutionary mask making methods have been invented to improve the performance of existing wafer steppers, like attenuated phase shifting mask (PSM) and thin Opaque MoSi on Glass (OMOG) mask. Those masks have their own pros and cons. We have done a pseudo finite difference time domain (pFDTD)_simulation study the lithography process performances of three types of masks in the advanced technology node. Both symmetric and asymmetric patterns are simulated. We found that all three masks exhibit similar process window in symmetric test patterns while dramatically differ in the asymmetric pattern. For this specific asymmetric pattern, PSM and OMOG masks show larger depth of focus (DOF) than Binary mask. However, the Mask Error Enhancement Factor (MEEF) and Normalized image log-slope (NILS) are terribly not lithography-friendly using PSM.","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Evaluating the Process Performances of Binary, PSM and OMOG Masks in Advanced Technology Node\",\"authors\":\"Weimei Xie, Yanpeng Chen, Shirui Yu, Yu Zhang\",\"doi\":\"10.1109/IWAPS51164.2020.9286801\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As the critical dimension of mask shrinks, revolutionary mask making methods have been invented to improve the performance of existing wafer steppers, like attenuated phase shifting mask (PSM) and thin Opaque MoSi on Glass (OMOG) mask. Those masks have their own pros and cons. We have done a pseudo finite difference time domain (pFDTD)_simulation study the lithography process performances of three types of masks in the advanced technology node. Both symmetric and asymmetric patterns are simulated. We found that all three masks exhibit similar process window in symmetric test patterns while dramatically differ in the asymmetric pattern. For this specific asymmetric pattern, PSM and OMOG masks show larger depth of focus (DOF) than Binary mask. However, the Mask Error Enhancement Factor (MEEF) and Normalized image log-slope (NILS) are terribly not lithography-friendly using PSM.\",\"PeriodicalId\":165983,\"journal\":{\"name\":\"2020 International Workshop on Advanced Patterning Solutions (IWAPS)\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Workshop on Advanced Patterning Solutions (IWAPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWAPS51164.2020.9286801\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWAPS51164.2020.9286801","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

随着掩模临界尺寸的缩小,人们发明了革命性的掩模制作方法来改善现有的晶圆步进器的性能,如衰减相移掩模(PSM)和薄不透明MoSi on Glass (OMOG)掩模。本文对三种掩模在先进技术节点上的光刻工艺性能进行了伪时域有限差分(pFDTD)仿真研究。对称和非对称模式都进行了模拟。我们发现所有三种掩模在对称测试模式下表现出相似的过程窗口,而在不对称测试模式下则表现出显著差异。对于这种特殊的不对称模式,PSM和OMOG掩模比二进制掩模具有更大的焦深(DOF)。然而,掩模误差增强因子(MEEF)和归一化图像对数斜率(NILS)在使用PSM时非常不适合光刻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evaluating the Process Performances of Binary, PSM and OMOG Masks in Advanced Technology Node
As the critical dimension of mask shrinks, revolutionary mask making methods have been invented to improve the performance of existing wafer steppers, like attenuated phase shifting mask (PSM) and thin Opaque MoSi on Glass (OMOG) mask. Those masks have their own pros and cons. We have done a pseudo finite difference time domain (pFDTD)_simulation study the lithography process performances of three types of masks in the advanced technology node. Both symmetric and asymmetric patterns are simulated. We found that all three masks exhibit similar process window in symmetric test patterns while dramatically differ in the asymmetric pattern. For this specific asymmetric pattern, PSM and OMOG masks show larger depth of focus (DOF) than Binary mask. However, the Mask Error Enhancement Factor (MEEF) and Normalized image log-slope (NILS) are terribly not lithography-friendly using PSM.
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