{"title":"基于清洁生产技术的mos门控功率半导体制造的集成方法,通过设计实现废物最小化","authors":"S. Anderson, F. Balkau, C. Gurkok","doi":"10.1109/ISEE.1994.337252","DOIUrl":null,"url":null,"abstract":"MOS-gated power semiconductors are enabling technologies for \"efficient end-use\" power conversion systems. The use of these technologies for energy savings offers an environmental benefit of reduction in carbon dioxide emissions if the primary energy source is fossil fuel based. The manufacturing of these technologies using clean production processes by design is discussed.<<ETX>>","PeriodicalId":434669,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Electronics and The Environment","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"An integrated approach to Mos-gated power semiconductor manufacturing based on cleaner production technologies for waste minimization by design\",\"authors\":\"S. Anderson, F. Balkau, C. Gurkok\",\"doi\":\"10.1109/ISEE.1994.337252\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MOS-gated power semiconductors are enabling technologies for \\\"efficient end-use\\\" power conversion systems. The use of these technologies for energy savings offers an environmental benefit of reduction in carbon dioxide emissions if the primary energy source is fossil fuel based. The manufacturing of these technologies using clean production processes by design is discussed.<<ETX>>\",\"PeriodicalId\":434669,\"journal\":{\"name\":\"Proceedings of 1994 IEEE International Symposium on Electronics and The Environment\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE International Symposium on Electronics and The Environment\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEE.1994.337252\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE International Symposium on Electronics and The Environment","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEE.1994.337252","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An integrated approach to Mos-gated power semiconductor manufacturing based on cleaner production technologies for waste minimization by design
MOS-gated power semiconductors are enabling technologies for "efficient end-use" power conversion systems. The use of these technologies for energy savings offers an environmental benefit of reduction in carbon dioxide emissions if the primary energy source is fossil fuel based. The manufacturing of these technologies using clean production processes by design is discussed.<>