芯片间互连的高密度硅载波传输线设计

X. Gu, L. Turlapati, B. Dang, C. Tsang, P. Andry, T. Dickson, Michael P. Beakes, J. Knickerbocker, D. Friedman
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引用次数: 16

摘要

两种差分带状线配置,间距为8µm和22µm,设计用于硅载体上的超密集互连。传输线采用四个布线级别实现,以支持超过2cm的11.5Gb/s数据速率的芯片对芯片通信,无需均衡。从具有良好的模型-硬件相关性的测试卷中提取损耗特征。通过仿真分析了阻抗和温度相关的损耗性能。用硬件测量方法对带地屏蔽和不带地屏蔽的双绞线之间以及双绞线之间的串扰性能进行了评价。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-density silicon carrier transmission line design for chip-to-chip interconnects
Two differential stripline configurations with pitches of 8µm and 22µm are designed for ultra dense interconnect on silicon carrier. The transmission lines are implemented using four wiring levels to support chip-to-chip communication at 11.5Gb/s data rate over 2cm without equalization. Loss characteristics are extracted from test coupons with good model-to-hardware correlation. Impedance and temperature dependent loss performance are analyzed with simulation. Crosstalk performance between two pairs with and without ground shielding, as well as between two twisted pairs, are also evaluated with hardware measurement.
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