一个70 v, 90 m/spl ω / mm/sup 2/，高速双层栅极UMOSFET由选择性CVD钨实现

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583785

S. Matsumoto, F. Yoshino, H. Ishii, T. Ohno

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引用次数: 4

摘要

选择CVD用于开发低导通电阻的高速UMOSFET，其新型双层钨制栅极。实验UMOSFET的有源器件面积为1 mm/sup 2/，导通电阻为90 m/spl ω /，击穿电压为70 V。其拐角频率(-3 dB)扩展到2.14 MHz。该值比传统的多晶硅栅极mosfet高1.8倍。

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A 70-V, 90-m/spl Omega/ mm/sup 2/, high-speed double-layer gate UMOSFET realized by selective CVD tungsten

Selective CVD is used to develop a low on-resistance, high-speed UMOSFET with a new double-layer gate electrode made of tungsten. The experimental UMOSFET has an active device area of 1 mm/sup 2/, an on-resistance of 90 m/spl Omega/ and a breakdown voltage of 70 V. Its corner frequency (-3 dB)is extended to 2.14 MHz. This value is 1.8 times higher than that of a conventional poly-Si-gate UMOSFET.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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