{"title":"用于32位串行和并行加法器的亚阈值少数派3门和逆变器在90纳米CMOS中实现","authors":"S. Aunet","doi":"10.1109/NORCHP.2009.5397845","DOIUrl":null,"url":null,"abstract":"32-bit serial and parallel adders exploiting minority-3 elements and inverters only, are presented, including chip measurements. The implementation is done in a standard triple-well 90 nm CMOS process. Measurements also demonstrate that the digital abstraction may be maintained for basic building blocks under the presence of stuck-open faults and defect transistors, for a redundancy factor, R, of only 2. R = 2 combined with shorted driven nodes is lower than the traditional R=3 in combination with majority voting.","PeriodicalId":308859,"journal":{"name":"2009 NORCHIP","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Subthreshold minority-3 gates and inverters used for 32-bit serial and parallel adders implemented in 90 nm CMOS\",\"authors\":\"S. Aunet\",\"doi\":\"10.1109/NORCHP.2009.5397845\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"32-bit serial and parallel adders exploiting minority-3 elements and inverters only, are presented, including chip measurements. The implementation is done in a standard triple-well 90 nm CMOS process. Measurements also demonstrate that the digital abstraction may be maintained for basic building blocks under the presence of stuck-open faults and defect transistors, for a redundancy factor, R, of only 2. R = 2 combined with shorted driven nodes is lower than the traditional R=3 in combination with majority voting.\",\"PeriodicalId\":308859,\"journal\":{\"name\":\"2009 NORCHIP\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 NORCHIP\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NORCHP.2009.5397845\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 NORCHIP","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHP.2009.5397845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Subthreshold minority-3 gates and inverters used for 32-bit serial and parallel adders implemented in 90 nm CMOS
32-bit serial and parallel adders exploiting minority-3 elements and inverters only, are presented, including chip measurements. The implementation is done in a standard triple-well 90 nm CMOS process. Measurements also demonstrate that the digital abstraction may be maintained for basic building blocks under the presence of stuck-open faults and defect transistors, for a redundancy factor, R, of only 2. R = 2 combined with shorted driven nodes is lower than the traditional R=3 in combination with majority voting.