基于双栅碳纳米管晶体管的通用逻辑模块

Andrew Zukoski, Xuebei Yang, K. Mohanram
{"title":"基于双栅碳纳米管晶体管的通用逻辑模块","authors":"Andrew Zukoski, Xuebei Yang, K. Mohanram","doi":"10.1145/2024724.2024921","DOIUrl":null,"url":null,"abstract":"Double-gate carbon nanotube field-effect transistors (DG-CNTFETs) can be controlled in the field to be either n-type or p-type through an extra polarity gate. This results in an embedded XOR behavior, which has inspired several novel circuit designs and architectures. This work makes the following contributions. First, we propose an accurate and efficient semi-classical modeling approach to realize the first SPICE-compatible model for circuit design and optimization of DG-CNTFETs. Second, we design and optimize universal logic modules (ULMs) in two circuit styles based on DG-CNTFETs. The proposed ULMs can leverage the full potential of the embedded XOR through the FPGA-centric lookup table optimization flow. Further, we demonstrate that DG-CNTFET ULMs in the double pass-transistor logic style, which inherently produces dual-rail outputs with balanced delay, are faster than DG-CNTFET circuits in the conventional single-rail static logic style that relies on explicit input inversion. On average across 12 benchmarks, the proposed dual-rail ULMs outperform the best DG-CNTFET fabrics based on tiling patterns by 37%, 12%, and 33% in area, delay, and total power, respectively.","PeriodicalId":275305,"journal":{"name":"2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"Universal logic modules based on double-gate carbon nanotube transistors\",\"authors\":\"Andrew Zukoski, Xuebei Yang, K. Mohanram\",\"doi\":\"10.1145/2024724.2024921\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Double-gate carbon nanotube field-effect transistors (DG-CNTFETs) can be controlled in the field to be either n-type or p-type through an extra polarity gate. This results in an embedded XOR behavior, which has inspired several novel circuit designs and architectures. This work makes the following contributions. First, we propose an accurate and efficient semi-classical modeling approach to realize the first SPICE-compatible model for circuit design and optimization of DG-CNTFETs. Second, we design and optimize universal logic modules (ULMs) in two circuit styles based on DG-CNTFETs. The proposed ULMs can leverage the full potential of the embedded XOR through the FPGA-centric lookup table optimization flow. Further, we demonstrate that DG-CNTFET ULMs in the double pass-transistor logic style, which inherently produces dual-rail outputs with balanced delay, are faster than DG-CNTFET circuits in the conventional single-rail static logic style that relies on explicit input inversion. On average across 12 benchmarks, the proposed dual-rail ULMs outperform the best DG-CNTFET fabrics based on tiling patterns by 37%, 12%, and 33% in area, delay, and total power, respectively.\",\"PeriodicalId\":275305,\"journal\":{\"name\":\"2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/2024724.2024921\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2024724.2024921","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25

摘要

双栅碳纳米管场效应晶体管(dg - cntfet)可以通过一个额外的极性栅极在场中控制为n型或p型。这导致了嵌入式异或行为,这激发了一些新颖的电路设计和架构。这项工作做出了以下贡献。首先,我们提出了一种精确、高效的半经典建模方法,实现了首个用于dg - cntfet电路设计和优化的spice兼容模型。其次,我们设计并优化了基于dg - cntfet的两种电路风格的通用逻辑模块(ulm)。所提出的ulm可以通过以fpga为中心的查找表优化流程充分利用嵌入式XOR的潜力。此外,我们证明了双通晶体管逻辑风格的DG-CNTFET ulm,其固有地产生具有平衡延迟的双轨输出,比传统单轨静态逻辑风格的DG-CNTFET电路更快,后者依赖于显式输入反转。在12个基准测试中,所提出的双轨ulm在面积、延迟和总功率方面分别比基于平铺图案的最佳DG-CNTFET织物高出37%、12%和33%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Universal logic modules based on double-gate carbon nanotube transistors
Double-gate carbon nanotube field-effect transistors (DG-CNTFETs) can be controlled in the field to be either n-type or p-type through an extra polarity gate. This results in an embedded XOR behavior, which has inspired several novel circuit designs and architectures. This work makes the following contributions. First, we propose an accurate and efficient semi-classical modeling approach to realize the first SPICE-compatible model for circuit design and optimization of DG-CNTFETs. Second, we design and optimize universal logic modules (ULMs) in two circuit styles based on DG-CNTFETs. The proposed ULMs can leverage the full potential of the embedded XOR through the FPGA-centric lookup table optimization flow. Further, we demonstrate that DG-CNTFET ULMs in the double pass-transistor logic style, which inherently produces dual-rail outputs with balanced delay, are faster than DG-CNTFET circuits in the conventional single-rail static logic style that relies on explicit input inversion. On average across 12 benchmarks, the proposed dual-rail ULMs outperform the best DG-CNTFET fabrics based on tiling patterns by 37%, 12%, and 33% in area, delay, and total power, respectively.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信