“超越摩尔”时代的微电子

K. Wise
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引用次数: 2

摘要

自集成电路首次亮相以来的五十年里,我们目睹了在执行电子功能方面的惊人进步。微处理器、内存和数据转换的进步彻底改变了数据处理、控制、通信和我们的生活方式。晶体管/芯片的数量增加了十亿倍,性能提高了至少一百万倍,成本也相应降低了。四十年来,这一进步一直受到缩放和“摩尔定律”的推动;然而,制造设备成本现在已经增加到超过许多国家的国民生产总值的地步,迫使许多公司走向无晶圆厂。而且,至少在使用我们所熟悉的设备时,规模化模式似乎即将结束。因此,芯片堆叠、硅通孔(tsv)和石墨烯等新材料的研究正在进行中[1]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microelectronics in the “More than Moore” era
In the fifty years since integrated circuits made their debut, we have witnessed amazing progress in the ability to perform electronic functions. Progress in microprocessors, memory, and data conversion has revolutionized data processing, control, communications, and the way we live. The number of transistors/ chip has increased by a factor of a billion and performance has improved at least a million-fold, with corresponding decreases in cost. For forty years, this progress has been driven by scaling and “Moore's Law”; however, fabrication facility cost has now increased to the point where it now exceeds the GNP of many countries, forcing many companies to go fabless. It also appears that the scaling paradigm is coming to an end, at least using devices as we know them. As a result, intense efforts on chip-stacking, through-silicon vias (TSVs), and new materials such as graphene are underway [1].
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