{"title":"圆柱栅-全能CGAA隧道场效应管的电学特性","authors":"M. Kessi, L. Belhimer","doi":"10.11159/TANN18.135","DOIUrl":null,"url":null,"abstract":"Recently, the Cylindrical Gate-all-Around CGAA MOSFET is considered as the promising device structure and a vital element for Vertical CMOS technology. However device optimization is still under investigations. In this work, electrical characteristics of Cylindrical GAA (CGAA) MOSFET are systematically analyzed. We evaluated and studied the length dependence of ON current (ION), and subthreshold leakage current (IOF) with different device parameters, especially channel length (Lg), channel thickness (tSi), oxide thickness (tox), and gate work function (ΦM), using the finite element, numerical method by solving Poisson’s equation in Cylindrical coordinate system.","PeriodicalId":211059,"journal":{"name":"Proceedings of the 2nd International Conference of Theoretical and Applied Nanoscience and Nanotechnology (TANN'18)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical Characteristics of Cylindrical Gate-All-Around CGAA Tunnel FETS\",\"authors\":\"M. Kessi, L. Belhimer\",\"doi\":\"10.11159/TANN18.135\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently, the Cylindrical Gate-all-Around CGAA MOSFET is considered as the promising device structure and a vital element for Vertical CMOS technology. However device optimization is still under investigations. In this work, electrical characteristics of Cylindrical GAA (CGAA) MOSFET are systematically analyzed. We evaluated and studied the length dependence of ON current (ION), and subthreshold leakage current (IOF) with different device parameters, especially channel length (Lg), channel thickness (tSi), oxide thickness (tox), and gate work function (ΦM), using the finite element, numerical method by solving Poisson’s equation in Cylindrical coordinate system.\",\"PeriodicalId\":211059,\"journal\":{\"name\":\"Proceedings of the 2nd International Conference of Theoretical and Applied Nanoscience and Nanotechnology (TANN'18)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2nd International Conference of Theoretical and Applied Nanoscience and Nanotechnology (TANN'18)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.11159/TANN18.135\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd International Conference of Theoretical and Applied Nanoscience and Nanotechnology (TANN'18)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.11159/TANN18.135","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical Characteristics of Cylindrical Gate-All-Around CGAA Tunnel FETS
Recently, the Cylindrical Gate-all-Around CGAA MOSFET is considered as the promising device structure and a vital element for Vertical CMOS technology. However device optimization is still under investigations. In this work, electrical characteristics of Cylindrical GAA (CGAA) MOSFET are systematically analyzed. We evaluated and studied the length dependence of ON current (ION), and subthreshold leakage current (IOF) with different device parameters, especially channel length (Lg), channel thickness (tSi), oxide thickness (tox), and gate work function (ΦM), using the finite element, numerical method by solving Poisson’s equation in Cylindrical coordinate system.
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