反应常压热等离子体射流超快速刻蚀光刻胶

2022 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2022-12-12 DOI:10.1109/issm55802.2022.10027028

Hibiki Kato, H. Hanafusa, Takuma Sato, S. Higashi

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引用次数: 0

摘要

我们开发了一种新的等离子体源——反应大气压微热等离子体射流(R-μTPJ)，用于光刻胶的超快速刻蚀。采用输入功率为260 w的氩气和氧气直流电弧放电产生R-μTPJ，局部加热并同时提供活性氧，刻蚀速率高达46.3 μm/s。

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Ultra-Fast Etching of Photoresist by Reactive Atmospheric-Pressure Thermal Plasma Jet

We have developed a new plasma source, reactive atmospheric-pressure micro-thermal-plasma-jet (R-μTPJ) for ultra-fast etching of photoresist. R-μTPJ was generated by DC arc discharge of Ar and O2 with input power of 260 W. local heating and simultaneous supply of reactive oxygen species has achieved an etching rate as high as 46.3 μm/s.

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2022 International Symposium on Semiconductor Manufacturing (ISSM)

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