193nm光刻技术制备硅纳米光子线结构

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings Pub Date : 2007-11-12 DOI:10.1109/LEOS.2007.4382268

S. Selvaraja, P. Jaenen, S. Beckx, W. Bogaert, P. Dumon, D. Van Thourout, R. Bates

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引用次数: 13

摘要

我们演示了使用193nm光刻技术在绝缘体上硅(SOI)技术上制造纳米光子线结构。给出了线器件的制作和测量结果。我们报道了450times220nm光子线的传输损耗为2.8 dB/cm。

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Silicon nanophotonic wire structures fabricated by 193nm optical lithography

We demonstrate the use of 193 nm optical lithography for fabricating nanophotonic wire structures on silicon-on-insulator (SOI) technology. We present fabrication and measurement result on wire devices. We report a propagation loss of 2.8 dB/cm for 450times220 nm photonic wire.

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LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings

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