应变分布对InGaN/AlInGaN光学增益的影响

2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI:10.1109/NUSOD.2009.5297194

D. Ahn, S. Park, B. Koo

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引用次数: 0

摘要

研究了应变分布对InGaN-AlInGaN QW发光二极管光学增益的影响。考虑晶体参数之间的差异，计算了多层量子阱结构中的应力和应变量。随着应变分布层的引入，光学增益有望显著增强。

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Effects of strain distribution on the optical gain of InGaN/AlInGaN

Effects of the strain distribution on the optical gain of InGaN-AlInGaN QW light-emitting diodes (LEDs)is investigated. The amount of stress and strain in the multilayer quantum well structures are calculated taking into account the difference between crystalline parameters. Siginificant enhancement of optical gain is expected with the introduction of strain distribution layers.

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2009 9th International Conference on Numerical Simulation of Optoelectronic Devices

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