具有NVM功能的全耗尽双栅1T-DRAM单元，用于高性能高密度嵌入式DRAM

2009 IEEE International Memory Workshop Pub Date : 2009-05-10 DOI:10.1109/IMW.2009.5090592

Ki-Heung Park, Young Min Kim, H. Kwon, S. Kong, Jong-Ho Lee

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引用次数: 4

摘要

我们研究了一种完全耗尽的双栅1-T DRAM单元器件，该器件在控制栅上具有SONOS类型的存储节点，用于非易失性存储功能。由于大存储节点和浮体源/漏结深度控制扩大了孔容量，我们可以提高数据保留时间I s，(写“1”)/I s，(写“0”)和器件可扩展性。该器件可能是未来高密度高性能IT-DRAM电池的一个非常有前途的候选器件。

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Fully Depleted Double-Gate 1T-DRAM Cell with NVM Function for High Performance and High Density Embedded DRAM

We have investigated a fully depleted double-gate 1-T DRAM cell device which has SONOS type storage node on control gate for nonvolatile memory function. Due to enlarged hole capacity by the large storage node and source/drain junction depth control in the floating body, we could improving data retention time, I s ,(write"1")/I s ,(write"0") and device scalability. Proposed device could be a very promising candidate for a future high density and high performance IT-DRAM cell.

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2009 IEEE International Memory Workshop

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