SiGe技术中的射频模拟和数字电路

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC Pub Date : 1996-02-08 DOI:10.1109/ISSCC.1996.488523

John R. Long, Miles A. Copeland, Stephen J. Kovacic, Duljit S. Malhi, David L. Harame

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引用次数: 54

摘要

在模拟和数字通信应用中证明了商业上可行的SiGe-HBT技术的性能。测量结果表明，采用该技术制造的电路能够满足1-5 GHz范围内的RF模拟和10 Gb/s以上范围的高速数字电路的应用需求，与其他高速/RF技术选项相比，具有更低的功耗、更低的成本和更高的可靠性。

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RF analog and digital circuits in SiGe technology

The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed digital circuits at or above the 10 Gb/s range, with potentially lower power, lower cost and higher reliability compared to other high-speed/RF technology options.

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来源期刊

1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC

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