{"title":"双极晶体管上E类放大器的功率特性","authors":"J.V. Rassohina, V. Krizhanovsky","doi":"10.1109/CRMICO.2000.1255876","DOIUrl":null,"url":null,"abstract":"The results of a numerical simulation based on the bipolar transistor first-order model of the class-E amplifier with a common emitter and low power dissipation on the collector, are presented.","PeriodicalId":387003,"journal":{"name":"2000 10th International Crimean Microwave Conference. \"Microwave and Telecommunication Technology\". Conference Proceedings (IEEE Cat. No.00EX415)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Power characteristics of the class E amplifier on the bipolar transistor\",\"authors\":\"J.V. Rassohina, V. Krizhanovsky\",\"doi\":\"10.1109/CRMICO.2000.1255876\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of a numerical simulation based on the bipolar transistor first-order model of the class-E amplifier with a common emitter and low power dissipation on the collector, are presented.\",\"PeriodicalId\":387003,\"journal\":{\"name\":\"2000 10th International Crimean Microwave Conference. \\\"Microwave and Telecommunication Technology\\\". Conference Proceedings (IEEE Cat. No.00EX415)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 10th International Crimean Microwave Conference. \\\"Microwave and Telecommunication Technology\\\". Conference Proceedings (IEEE Cat. No.00EX415)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2000.1255876\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 10th International Crimean Microwave Conference. \"Microwave and Telecommunication Technology\". Conference Proceedings (IEEE Cat. No.00EX415)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2000.1255876","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Power characteristics of the class E amplifier on the bipolar transistor
The results of a numerical simulation based on the bipolar transistor first-order model of the class-E amplifier with a common emitter and low power dissipation on the collector, are presented.