并五苯金属-绝缘体-半导体电容器C-V特性的思考

Keum-dong Jung, Byung-ju Kim, Byeong-Ju Kim, C. Lee, Dong-Wook Park, Byung-Gook Park, Hyungcheol Shin, J. Lee
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引用次数: 2

摘要

在不同的测量条件下,获得了并五苯MIS电容器的C-V特性。由于孔响应慢,测量频率高会使测量电容减小。当使用厚半导体时,由于块状半导体的电阻,无法获得准确的C-V特性。偏置应力使正或负的平带电压漂移,也使精确的C-V测量复杂化。因此,为了获得可靠的有机MIS电容器的C- V特性,必须考虑这些特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Considerations on the C-V Characteristics of Pentacene Metal-Insulator-Semiconductor Capacitors
C-V characteristics of pentacene MIS capacitors are obtained with various measurement conditions. High measuring frequency can decrease the measured capacitance due to the slow response of holes. When thick semiconductor is used, accurate C-V characteristics can not be obtained due to the resistance of bulk semiconductor. Bias stress makes positive or negative flat band voltage shift, also complicate accurate C-V measurement. Therefore, to obtain reliable C- V characteristics of organic MIS capacitors, these properties should be considered.
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