High linear low noise amplifier based on self-biasing multiple gated transistors

Noise level frequently set the basic limit on the smallest signal. New noise reduction technology and amplifiers voltage-noise density, yet still offer high speed, high accuracy and low power solution. Low noise amplifiers always play a significant role in RF technology. Hence in this paper, high linear low noise amplifier (LNA) using cascode self-biased multiple gated transistors (MGTR) is presented. The proposed system is covering 0.9 to 2.4 GHz applications. To verify the functionality of the proposed LNA as a bottleneck of RF technology, a cascode LNA without MGTR is implemented and synthesized. The comparison has been done with the single-gate LNA. From the synthesize result, proposed LNA obtained 10 dBm third-order input intercept point (IIP3) in compare with single-gate LNA at 9 dB gain. The proposed LNA is implemented in 90 nm CMOS technology and reported 13 dBm IIP3, 1.9 dB NF and 9 dB gain, while consuming 7.9 mW from 2 V supply.