应变GaAs/ in /sub x/Ga/sub 1-x/As/GaAs异质结构的光致发光参数

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) Pub Date : 2000-05-14 DOI:10.1109/ICMEL.2000.840574

N. Grigor’ev, E. Gule, A. Klimovskaya, Yu.A. Dryga, V. Litovchenko

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摘要

研究了在x为0.16 ~ 0.35的GaAs衬底上生长In/sub x/Ga/sub 1-x/ as单量子阱(QW)的光致发光特性。QW层厚度(d)约等于或大于临界厚度(d/sub c/)。发现PL参数依赖于一个量级(d-d/sub c/)/d/sub c/，如果d>d/sub c/。qw厚度d不超过临界值d的异质结构满足均匀弹性应变异质结构的条件，几乎没有缺陷。这些异质结构QW和PL波段的能级(E/sub PL/)可以从理论上描述，该波段的频宽已接近其物理极限。d>d/sub c/的异质结构缺陷浓度(/spl ap/10/sup 11/ cm/sup -2/)随厚度的增加而增加。In原子在高应变异质结构中可能发生大范围的非均匀再分布。

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Photoluminescence parameters in strained GaAs/In/sub x/Ga/sub 1-x/As/GaAs-heterostructures

The photoluminescence (PL) of In/sub x/Ga/sub 1-x/As-single quantum wells (QW) grown on GaAs substrate with x ranging between 0.16 and 0.35 was studied. The thickness (d) of QW layers was about or larger than the critical one (d/sub c/). The PL parameters were found to depend on a magnitude (d-d/sub c/)/d/sub c/ if d>d/sub c/. The heterostructures with QW-thickness d not exceeding the critical one d, meets conditions of homogeneously elastically strained heterostructures almost without defects. The energy levels in QW's and PL bands (E/sub PL/) in these heterostructures may be described theoretically, and the FWHM of the band approaches its physical limit. The heterostructures with d>d/sub c/ have a defect concentration (/spl ap/10/sup 11/ cm/sup -2/) increasing with the increase of thickness. A large long-range inhomogeneous redistribution of In atoms probably occurs in the highly strained heterostructures.

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2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400)

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