功率约束下参数良率和可靠性改进的系统级自愈

S. Narasimhan, Somnath Paul, R. Chakraborty, F. Wolff, C. Papachristou, D. Weyer, S. Bhunia
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引用次数: 9

摘要

集成电路的后硅制程补偿或“修复”已成为在参数变化下提高成品率和可靠性的有效方法。在由多个内核组成的片上系统(SoC)中,不同的内核可能由于局部模内变化而经历不同的工艺转移。此外,核心可能对系统功耗和系统输出参数(如服务质量或吞吐量)具有不同的灵敏度。硅后愈合已经在内核级别使用各种补偿方法解决了。在本文中,我们提出了一种系统级修复算法,用于补偿SoC芯片在功率约束下的特定输出参数。我们将修复问题表述为一个有序优化问题,其中需要为各个核心分配适当数量的修复,以满足目标系统性能和功率需求。接下来,我们提出了一个有效的解决方案,使用先验的设计时的信息,有关的相对敏感性的核心系统性能和功率。实例系统的仿真结果表明,与传统的修复方法相比,所提出的修复方法可以获得更高的参数良率和更好的沉降时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
System level self-healing for parametric yield and reliability improvement under power bound
Post-silicon process compensation or “healing” of integrated circuits (ICs) has emerged as an effective approach to improve yield and reliability under parameter variations. In a System-on-Chip (SoC) comprising of multiple cores, different cores can experience different process shift due to local within-die variations. Furthermore, the cores are likely to have different sensitivities with respect to system power dissipation and system output parameters such as quality of service or throughput. Post-silicon healing has been addressed earlier at core level using various compensation approaches. In this paper, we present a system level healing algorithm for compensating SoC chips for a specific output parameter under power constraint. We formulate the healing problem as an ordinal optimization problem, where individual cores need to be assigned the right amount of healing that satisfies the target system performance and power requirement. Next, we propose an efficient solution to the problem using a priori design-time information about the relative sensitivities of the cores to system performance and power. Simulation results for example systems show that the proposed healing approach can achieve higher parametric yield and better settling time compared to conventional healing approaches.
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