宇宙射线中子在dram中的多比特软误差模拟

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871259

Y. Tosaka, S. Satoh

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引用次数: 4

摘要

虽然已经证明宇宙射线中子在软误差现象中起重要作用，但中子诱导软误差现象中的一些重要问题仍有待澄清。本文利用中子诱导软误差模拟器(NISES)对16mb dram中的中子诱导多比特误差进行了数值研究，并将模拟结果与实验数据进行了比较。讨论了多比特SE的比例效应、配置模式对双比特SE速率的影响以及多比特SE对纠错码的影响。

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Simulation of multiple-bit soft errors induced by cosmic ray neutrons in DRAMs

Although it has been shown that cosmic ray neutrons play an important role in soft error (SE) phenomena, some important issues in neutron-induced SE phenomena are still to be clarified. In this paper, neutron-induced multiple-bit SEs in 16 Mb DRAMs are investigated numerically using the Neutron-Induced Soft Error Simulator (NISES), and simulated results are compared to experimental data. Scaling effects on multiple-bit SEs, effects of configuration patterns on double-bit SE rates, and the influence of multiple-bit SEs on an error correction code are discussed.

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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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