调质mosfet:一维与二维量子分析

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871239

A. Abramo, L. Selmi, Z. Yu, R. Dutton

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引用次数: 2

摘要

本文介绍了缩放“良调质mosfet”的二维量子力学模拟(阿萨德等人，IEDM Tech. Dig)。， p. 547, 1999, and IEEE trans。电子发展，vol. 47, p. 232, 2000)在深亚微米范围内具有不同的有效通道长度。模拟结果是通过二维薛定谔求解器得到的，该方法已经应用于理想的MOS结构。给出了一维和二维方法的比较，并强调了两种模型之间的差异。

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Well-tempered MOSFETs: 1D versus 2D quantum analysis

This paper presents the two-dimensional quantum mechanical simulation of scaled "well-tempered MOSFETs" (Assad et al, IEDM Tech. Dig., p. 547, 1999, and IEEE trans. Electron Dev. vol. 47, p. 232, 2000) featuring different effective channel lengths in the deep sub-micron range. The simulation results were obtained by means of a two-dimensional Schrodinger solver that had been previously applied to idealized MOS structures. Comparison between one- and two dimensional approaches is presented, and the difference between the two models are highlighted.

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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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