X. Chauffleur, P. Tounsi, J. Dorkel, P. Dupuy, J. Fradin
{"title":"功率MOS芯片非线性三维电热研究","authors":"X. Chauffleur, P. Tounsi, J. Dorkel, P. Dupuy, J. Fradin","doi":"10.1109/BIPOL.2004.1365768","DOIUrl":null,"url":null,"abstract":"Based on the use of a boundary element solver, a fully coupled electrical and thermal 3D modeling for low voltage power MOS transistors is proposed. The analogy between the 3D heat conduction and the 3D electrical conduction is turned to good account. The coupling between these two phenomena gives us the realistic voltage and current distributions in more than the temperature mapping. Results obtained from simpler approaches are compared to the reference solution.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Non linear 3D electrothermal investigation on power MOS chips\",\"authors\":\"X. Chauffleur, P. Tounsi, J. Dorkel, P. Dupuy, J. Fradin\",\"doi\":\"10.1109/BIPOL.2004.1365768\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on the use of a boundary element solver, a fully coupled electrical and thermal 3D modeling for low voltage power MOS transistors is proposed. The analogy between the 3D heat conduction and the 3D electrical conduction is turned to good account. The coupling between these two phenomena gives us the realistic voltage and current distributions in more than the temperature mapping. Results obtained from simpler approaches are compared to the reference solution.\",\"PeriodicalId\":447762,\"journal\":{\"name\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2004.1365768\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365768","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Non linear 3D electrothermal investigation on power MOS chips
Based on the use of a boundary element solver, a fully coupled electrical and thermal 3D modeling for low voltage power MOS transistors is proposed. The analogy between the 3D heat conduction and the 3D electrical conduction is turned to good account. The coupling between these two phenomena gives us the realistic voltage and current distributions in more than the temperature mapping. Results obtained from simpler approaches are compared to the reference solution.
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