采用CMOS技术的参数太赫兹倍频

CCECE 2010 Pub Date : 2010-05-02 DOI:10.1109/CCECE.2010.5575203

Zhixing Zhao, Jean-François Bousquet, S. Magierowski

{"title":"采用CMOS技术的参数太赫兹倍频","authors":"Zhixing Zhao, Jean-François Bousquet, S. Magierowski","doi":"10.1109/CCECE.2010.5575203","DOIUrl":null,"url":null,"abstract":"Accumulation-mode MOS varactors (AMOSVs) are considered for use in THz frequency multipliers. The superior modulation ratios and lower series loss relative to silicon Schottky diodes for a 130-nm CMOS technology are highlighted. Dynamic cutoff frequencies in excess of 1-THz are predicted. AMOSV potential for 10-dB loss, 600-GHz doublers is discussed as is an integrated 100-GHz doubler design.","PeriodicalId":325063,"journal":{"name":"CCECE 2010","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Parametric THz frequency multiplication using CMOS technology\",\"authors\":\"Zhixing Zhao, Jean-François Bousquet, S. Magierowski\",\"doi\":\"10.1109/CCECE.2010.5575203\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Accumulation-mode MOS varactors (AMOSVs) are considered for use in THz frequency multipliers. The superior modulation ratios and lower series loss relative to silicon Schottky diodes for a 130-nm CMOS technology are highlighted. Dynamic cutoff frequencies in excess of 1-THz are predicted. AMOSV potential for 10-dB loss, 600-GHz doublers is discussed as is an integrated 100-GHz doubler design.\",\"PeriodicalId\":325063,\"journal\":{\"name\":\"CCECE 2010\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CCECE 2010\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CCECE.2010.5575203\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CCECE 2010","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CCECE.2010.5575203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

累加模式MOS变容管(amosv)被考虑用于太赫兹倍频器。在130纳米CMOS技术中，与硅肖特基二极管相比，具有优越的调制比和较低的串联损耗。预测动态截止频率超过1太赫兹。讨论了10db损耗的AMOSV潜力，600 ghz倍频器，以及集成的100 ghz倍频器设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Parametric THz frequency multiplication using CMOS technology

Accumulation-mode MOS varactors (AMOSVs) are considered for use in THz frequency multipliers. The superior modulation ratios and lower series loss relative to silicon Schottky diodes for a 130-nm CMOS technology are highlighted. Dynamic cutoff frequencies in excess of 1-THz are predicted. AMOSV potential for 10-dB loss, 600-GHz doublers is discussed as is an integrated 100-GHz doubler design.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

CCECE 2010

自引率

0.00%

发文量