双极硅器件中载流子寿命随温度的变化及其对器件工作的影响

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583738

Y.C. Gerstenmaief

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引用次数: 12

摘要

本文介绍了载流子寿命随温度变化的研究，主要是在gto晶闸管中，以及它对测量和模拟器件行为(栅极触发电流)的影响。为了定性地解释结果，给出了理论分析。根据观察到的栅极触发电流的温度依赖性，推断出适当的/spl τ /(T)定律。在25/spl℃~ 125/spl℃范围内，/spl tau/呈严格的线性增长。

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A study on the variation of carrier lifetime with temperature in bipolar silicon devices and its influence on device operation

This paper presents a study on the variation of carrier lifetime with temperature, mainly in GTO-thyristors, and its consequences on measured and simulated device behaviour (gate trigger current). A theoretical analysis is given in order to explain the results qualitatively. From the observed temperature dependence of the gate trigger current the appropriate /spl tau/(T)-law is inferred. In the region of 25/spl deg/C to 125/spl deg/C a strictly linear increase of /spl tau/ is found.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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