神经横杆的高容错性

Djaafar Chabi, Jacques-Olivier Klein
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引用次数: 15

摘要

提出的纳米级电子器件通常预计具有制造缺陷的可能性增加。本文提出了一种基于忆阻交叉栅结构的新型高容错性结构,使神经网络能够可靠地实现。基于Delta规则[1]的单层横杆学习方法的仿真结果表明,该方法对布尔函数的学习收敛速度非常快。此外,我们模拟缺陷的影响来衡量我们的架构修复缺陷神经元的能力,使用有或没有冗余的竞争学习方案。该体系结构能够学习布尔函数,制造不良率不超过13%,冗余量合理。与RMR、冯·诺依曼复用和重构等技术相比,该方法具有最佳的容错性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Hight fault tolerance in neural crossbar
Proposed nanometer-scale electronic devices are generally expected to feature an increased probability of manufacturing defects. We present in this paper a novel, highly fault-tolerant architecture, based on memristor crossbar architecture that may enable reliable implementation of neural network. Simulation results of our learning method inspired of Delta rule [1] for monolayer crossbar, exhibits very fast convergence rate to learn Boolean functions. In addition we simulate the impact of defects to measure the ability of our architecture to repair defective neurons, using a competitive learning scheme with or without redundancy. The architecture is able to learn the Boolean functions with manufacturing defect rate up to 13% with reasonable redundancy amount. It shows the best fault-tolerance performance comparing with the other techniques like RMR, von Neumann multiplexing and reconfiguration.
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