附加介质谐振腔对FET DRO的二次谐波功率增强

J. Kwon, I. Kim
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引用次数: 0

摘要

本文报道了在漏极处增加一个介电谐振器,可以显著增强串联反馈场效应管DRO(介电谐振振荡器)的二次谐波输出信号功率。通过实验观察了这种增强,并基于两个dr之间的反射和反馈机制对其进行了分析。最后,我们提出了一个最佳反射条件和二次DR的位置,以从FET的DRO中提取二次谐波频率下的最大输出功率
本文章由计算机程序翻译,如有差异,请以英文原文为准。
2nd Harmonic Power Enhancement of FET DRO with Additional Dielectric Resonator
This paper reports that the output signal power of a series feedback FET DRO (dielectric resonator oscillator), at the second harmonic frequency, can be significantly enhanced with an additional DR (dielectric resonator) at the drain port. This enhancement has been observed by an experiment and analyzed based on reflection and feedback mechanism between two DRs. Finally we propose that there is an optimum reflection condition and location of the second DR to extract the maximum output power at the second harmonic frequency from the FET DRO
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