n极氮化镓基miss - hemt的异常输出电导

69th Device Research Conference Pub Date : 2011-06-20 DOI:10.1109/DRC.2011.5994502

M. Wong, U. Singisetti, Jing Lu, J. Speck, U. Mishra

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引用次数: 5

摘要

我们提出n极性GaN mishemt的异常输出电导是由净负极化界面的供体样陷阱电离引起的。这是一种低频现象，用VD改变了器件的VT，而在RF条件下没有发现输出电导增加或相关器件性能下降的证据。在n极GaN mishemt中，需要适当的背障设计来减轻DC-GDS。

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Anomalous output conductance in N-polar GaN-based MIS-HEMTs

We propose that the anomalous output conductance in N-polar GaN MIS-HEMTs was caused by ionization of donor-like traps from a net negative polarization interface. It is a low-frequency phenomenon that changes the VT of the device with VD, while no evidence of increased output conductance or related device performance degradation was found under RF conditions. Appropriate back-barrier designs are needed to mitigate the DC-GDS in N-polar GaN MIS-HEMTs.

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69th Device Research Conference

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