{"title":"互补排列石墨烯纳米带布尔门","authors":"Yande Jiang, N. C. Laurenciu, S. Cotofana","doi":"10.1145/3232195.3232199","DOIUrl":null,"url":null,"abstract":"With CMOS feature size heading towards atomic dimensions, unjustifiable static power, reliability, and economic implications are exacerbating, prompting for research on new materials, devices, and/or computation paradigms. Within this context, Graphene Nanorib-bons (GNRs), owing to graphene’s excellent electronic properties, may serve as basic blocks for carbon-based nanoelectronics. In this paper we build upon the fact that GNR behaviour can be controlled according to some desired functionality via top/back gate contacts and propose to combine GNRs with complementary functionalities to construct Boolean gates. To this end, we introduce a generic GNR-based Boolean gate structure, composed of two GNRs, i.e., a pull-up GNR performing the gate Boolean function and a pull-down GNR performing the inverted Boolean function. Subsequently, by properly adjusting GNRs’ dimensions and topology, we design 2-input AND, NAND, and XOR graphene-based Boolean gates, as well as 1-input gates, i.e., inverter and buffer. Our SPICE simulations indicate that the proposed gates exhibit a smaller propagation delay, from 23% for the XOR gate to 6× for the AND gate, and 2 orders of magnitude smaller power consumption, when compared with 7 nm CMOS based counterparts, while requiring a 1 to 2 orders of magnitude smaller active area footprint. These results clearly indicate that GNR-based gates have great potential as basic building blocks for future beyond CMOS energy effective nanoscale circuits.","PeriodicalId":401010,"journal":{"name":"2018 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Complementary Arranged Graphene Nanoribbon-based Boolean Gates\",\"authors\":\"Yande Jiang, N. C. Laurenciu, S. Cotofana\",\"doi\":\"10.1145/3232195.3232199\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With CMOS feature size heading towards atomic dimensions, unjustifiable static power, reliability, and economic implications are exacerbating, prompting for research on new materials, devices, and/or computation paradigms. Within this context, Graphene Nanorib-bons (GNRs), owing to graphene’s excellent electronic properties, may serve as basic blocks for carbon-based nanoelectronics. In this paper we build upon the fact that GNR behaviour can be controlled according to some desired functionality via top/back gate contacts and propose to combine GNRs with complementary functionalities to construct Boolean gates. To this end, we introduce a generic GNR-based Boolean gate structure, composed of two GNRs, i.e., a pull-up GNR performing the gate Boolean function and a pull-down GNR performing the inverted Boolean function. Subsequently, by properly adjusting GNRs’ dimensions and topology, we design 2-input AND, NAND, and XOR graphene-based Boolean gates, as well as 1-input gates, i.e., inverter and buffer. Our SPICE simulations indicate that the proposed gates exhibit a smaller propagation delay, from 23% for the XOR gate to 6× for the AND gate, and 2 orders of magnitude smaller power consumption, when compared with 7 nm CMOS based counterparts, while requiring a 1 to 2 orders of magnitude smaller active area footprint. These results clearly indicate that GNR-based gates have great potential as basic building blocks for future beyond CMOS energy effective nanoscale circuits.\",\"PeriodicalId\":401010,\"journal\":{\"name\":\"2018 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/3232195.3232199\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/3232195.3232199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
With CMOS feature size heading towards atomic dimensions, unjustifiable static power, reliability, and economic implications are exacerbating, prompting for research on new materials, devices, and/or computation paradigms. Within this context, Graphene Nanorib-bons (GNRs), owing to graphene’s excellent electronic properties, may serve as basic blocks for carbon-based nanoelectronics. In this paper we build upon the fact that GNR behaviour can be controlled according to some desired functionality via top/back gate contacts and propose to combine GNRs with complementary functionalities to construct Boolean gates. To this end, we introduce a generic GNR-based Boolean gate structure, composed of two GNRs, i.e., a pull-up GNR performing the gate Boolean function and a pull-down GNR performing the inverted Boolean function. Subsequently, by properly adjusting GNRs’ dimensions and topology, we design 2-input AND, NAND, and XOR graphene-based Boolean gates, as well as 1-input gates, i.e., inverter and buffer. Our SPICE simulations indicate that the proposed gates exhibit a smaller propagation delay, from 23% for the XOR gate to 6× for the AND gate, and 2 orders of magnitude smaller power consumption, when compared with 7 nm CMOS based counterparts, while requiring a 1 to 2 orders of magnitude smaller active area footprint. These results clearly indicate that GNR-based gates have great potential as basic building blocks for future beyond CMOS energy effective nanoscale circuits.