应变对纳米线mosfet迁移率的影响:几何效应和压阻模型

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI:10.1109/ESSDERC.2015.7324752

J. Pelloux-Prayer, M. Cassé, F. Triozon, S. Barraud, Y. Niquet, J. Rouviere, O. Faynot, G. Reimbold

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引用次数: 11

摘要

通过压阻测量，研究了应变对三栅FDSOI纳米线载流子迁移率的影响。我们提出了一个基于简单假设的经验模型，该模型允许拟合各种器件几何形状的压阻系数以及载流子迁移率。我们强调了沟道高度低于11nm的Trigate纳米线的应变效应增强。

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Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model

The effect of strain on carrier mobility in triple gate FDSOI nanowires is experimentally investigated through piezoresistance measurements. We propose an empirical model based on simple assumptions that allows fitting the piezoresistive coefficients as well as the carrier mobility for various device geometries. We highlight an enhanced strain effect for Trigate nanowires with channel height below 11nm.

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2015 45th European Solid State Device Research Conference (ESSDERC)

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