基于cntfet的射频电子技术-现状和未来展望

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 1900-01-01 DOI:10.1109/SIRF.2016.7445479

M. Schroter, M. Claus, S. Hermann, J. Tittman-Otto, M. Haferlach, S. Mothes, S. Schulz

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引用次数: 5

摘要

与硅基场效应晶体管相比，碳纳米管场效应晶体管具有许多优点。虽然大多数文献涉及数字应用，但本文概述了CNTFET技术在射频模拟应用中的现状，包括各自的要求。讨论了迄今为止所取得的晶体管和电路的结果以及改进性能的可能制造方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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CNTFET-based RF electronics — State-of-the-art and future prospects

Carbon nanotube (CNT) field effect transistors (FETs) are expected to have several advantages over silicon-based FETs. While most of the literature deals with digital applications, this paper gives an overview on the present status of CNTFET technology for radio-frequency analog applications, including the respective requirements. Results for transistors and circuits achieved so far as well as possible fabrication approaches for performance improvement are discussed.

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2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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