25nm对称/非对称双栅、背栅和块体CMOS的直流和交流性能分析

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871229

M. Ieong, H.-S.P. Wong, Y. Taur, P. Oldiges, D. Frank

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引用次数: 23

摘要

本文分析了25 nm双栅、后门和超晕CMOS器件的性能，包括自一致的二维量化效应。超薄体双栅极的栅体耦合效应增强了驱动电流。通道量化效应可以显著降低非对称双栅、后门和块体CMOS芯片的驱动电流。结果表明，SDG中特殊的SCE抗扰度提供了比传统MOSFET结构更大的性能杠杆。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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DC and AC performance analysis of 25 nm symmetric/asymmetric double-gate, back-gate and bulk CMOS

In this paper, the performance of 25 nm double-gate, back-gate and super-halo CMOS devices has been analyzed, including the self-consistent 2D quantization effect. The drive current is enhanced by the gate-to-body coupling effect for double-gate with ultra-thin body. The channel quantization effect can substantially degrade the drive current for asymmetric double-gate, back-gate, and bulk CMOS ICs. It is demonstrated that the exceptional SCE immunity in SDG offers substantial performance leverage over conventional MOSFET structures.

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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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