{"title":"沟槽功率MOSFET低侧开关，优化集成肖特基二极管","authors":"D. Calafut","doi":"10.1109/WCT.2004.240290","DOIUrl":null,"url":null,"abstract":"This work investigates the device and circuit performance of an integrated MOSFET-Schottky diode solution for lowside switching, or synchronous rectifier, applications. The integrated diode structure is a trench MOS barrier Schottky (TMBS) device, and the area of the TMBS structure, as a ratio of the total active area, was the independent variable in this study, ranging from zero to 50%. The results of both simulation and experiments show that there is an optimum contribution of TMBS area which maximizes the performance of the integrated device. Initially, the results provided a strong correlation between TMBS contribution, diode recovery characteristics, and DC-DC converter efficiency. However, a closer examination of the underlying, device level current distribution waveforms, as well as the power loss mechanisms in the converter, reveal a more complex interaction of the TMBS structure and the MOSFET. It is only in the context of this analysis, that useful device design insight can be extracted.","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"Trench power MOSFET lowside switch with optimized integrated Schottky diode\",\"authors\":\"D. Calafut\",\"doi\":\"10.1109/WCT.2004.240290\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work investigates the device and circuit performance of an integrated MOSFET-Schottky diode solution for lowside switching, or synchronous rectifier, applications. The integrated diode structure is a trench MOS barrier Schottky (TMBS) device, and the area of the TMBS structure, as a ratio of the total active area, was the independent variable in this study, ranging from zero to 50%. The results of both simulation and experiments show that there is an optimum contribution of TMBS area which maximizes the performance of the integrated device. Initially, the results provided a strong correlation between TMBS contribution, diode recovery characteristics, and DC-DC converter efficiency. However, a closer examination of the underlying, device level current distribution waveforms, as well as the power loss mechanisms in the converter, reveal a more complex interaction of the TMBS structure and the MOSFET. It is only in the context of this analysis, that useful device design insight can be extracted.\",\"PeriodicalId\":303825,\"journal\":{\"name\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCT.2004.240290\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.240290","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Trench power MOSFET lowside switch with optimized integrated Schottky diode
This work investigates the device and circuit performance of an integrated MOSFET-Schottky diode solution for lowside switching, or synchronous rectifier, applications. The integrated diode structure is a trench MOS barrier Schottky (TMBS) device, and the area of the TMBS structure, as a ratio of the total active area, was the independent variable in this study, ranging from zero to 50%. The results of both simulation and experiments show that there is an optimum contribution of TMBS area which maximizes the performance of the integrated device. Initially, the results provided a strong correlation between TMBS contribution, diode recovery characteristics, and DC-DC converter efficiency. However, a closer examination of the underlying, device level current distribution waveforms, as well as the power loss mechanisms in the converter, reveal a more complex interaction of the TMBS structure and the MOSFET. It is only in the context of this analysis, that useful device design insight can be extracted.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
